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TM
HD-6409/883
CMOS Manchester Encoder-Decoder
Description
The HD-6409/883 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using selfaligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts Nonreturn-to-Zero code (NRZ) into Manchester code and decodes Manchester code into Nonreturn-to-Zero code. For serial data communication, Manchester code does not have some of the deficiencies inherent in Nonreturn-to-Zero code. For instance, use of the MED on a serial line eliminates DC components, provides clock recovery, and gives a relatively high degree of noise immunity. Because the MED converts the most commonly used code (NRZ) to Manchester code, the advantages of using Manchester code are easily realized in a serial data link. In the Repeater mode, the MED accepts Manchester code input and reconstructs it with a recovered clock. This minimizes the effects of noise on a serial data link. A digital phase lock loop generates the recovered clock. A maximum data rate of 1MHz requires only 50mW of power. Manchester code is used in magnetic tape recording and in fiber optic communication, and generally is used where data accuracy is imperative. Because it frames blocks of data, the HD-6409/883 easily interfaces to protocol controllers.
March 1997
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Converter or Repeater Mode * Independent Manchester Encoder and Decoder Operation * Static to One Megabit/Sec Data Rate Guaranteed * Low Bit Error Rate * Digital PLL Clock Recovery * On Chip Oscillator * Low Operating Power: 50mW Typical at +5V * Available in 20 Lead Dual-In-Line and 20 Pad LCC Package
Ordering Information
PART NUMBER HD1-6409/883 HD4-6409/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC PACKAGE CERDIP CLCC PKG. NO. F20.3 J20.A
Pinouts
HD1-6409/883 (CERDIP) TOP VIEW HD4-6409/883 (CLCC) TOP VIEW
BZI BOI UDI SD/CDS SDO SRST NVM DCLK RST
1 2 3 4 5 6 7 8 9
20 VCC 19 BOO 18 BZO 17 SS 16 ECLK 15 CTS 14 MS 13 OX 12 IX 11 CO 9 RST 10 GND 11 CO 12 IX 13 OX SRST NVM DCLK 6 7 8 16 ECLK 15 CTS 14 MS SD/CDS SDO 4 5 3 2 1 20 19 18 BZO 17 SS
GND 10
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved
BOO
VCC
BOI
UDI
BZI
FN2959.1
135
HD-6409/883 Block Diagram
SDO NVM BOI BZI UDI EDGE DETECTOR RESET SD SD/CDS INPUT/ OUTPUT SELECT MANCHESTER ENCODER COMMAND SYNC GENERATOR CTS DATA INPUT LOGIC 5-BIT SHIFT REGISTER AND DECODER OUTPUT SELECT LOGIC BOO
BZO
SRST RST
MS IX OX CO SS OSCILLATOR ECLK DCLK
COUNTER CIRCUITS
Logic Symbol
17 SS CO 11 CLOCK GENERATOR 13 12 OX IX
SD/CDS ECLK
4 16 ENCODER
19 18 15
BOO BZO CTS
MS RST SDO DCLK NVM SRST
14 9 5 8 7 6 CONTROL 2 1 3 BOI BZI UDI
DECODER
136
HD-6409/883
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V Input, Output or I/O Voltage Applied. . . . . GND -0.5V to VCC +0.5V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance JA ( oC/W) JC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 83 23 CLCC Package . . . . . . . . . . . . . . . . . . 95 26 Storage Temperature Range . . . . . . . . . . . . . . . . .-65oC to +150oC Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . 50ns Max Sync. Transition Span (t2) . . . . . . . . . 1.5 DBP Typical, (Notes 1, 2) Short Data Transition Span (t4) . . . . . 0.5 DBP Typical, (Notes 1, 2) Long Data Transition Span (t5) . . . . . 1.0 DBP Typical, (Notes 1, 2) Zero Crossing Tolerance (tCD5) . . . . . . . . . . . . . . . . . . . . . (Note 3)
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. DBP - Data Bit Period. Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X; one DBP = 32 Clock Cycles. 2. The input conditions specified are nominal values, the actual input waveforms transition spans may vary by 2 IX clock cycles (16X mode) or 6 IX clock cycles (32X mode). 3. The maximum zero crossing tolerance is 2 IX clock cycles (16X mode) or 6 IX clock cycles (32X mode) from the nominal. TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS PARAMETER Logic "1" Input Voltage SYMBOL VIH CONDITIONS VCC = 4.5V GROUP A SUBGROUPS 1, 2, 3 TEMPERATURE -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC MIN 70% VCC VCC -0.5 MAX UNITS V
Logic "0" Input voltage Logic "1" Input Voltage (RST) Logic "0" Input Voltage (RST) Logic "1" Input Voltage (IX) Logic "0" Input Voltage (IX) Input Leakage Current (Except IX)
VIL VIHR
VCC = 4.5V VCC = 5.5V
1, 2, 3 1, 2, 3
20% VCC -
V V
VILR
VCC = 4.5V
1, 2, 3
-
GND +0.5
V
VIHC VlLC II
VCC = 5.5V VCC = 4.5V VIN = VCC or GND VCC = 5.5V VlN = VCC or GND VCC = 5.5V VOUT = VCC or GND VCC = 5.5V IOH = -2.0mA VCC = 4.5V (Note 1) IOL = +2.0mA VCC = 4.5V (Note 1)
1, 2, 3 1, 2, 3 1, 2, 3
VCC -0.5 -1.0
GND +0.5 +1.0
V V A
Input Leakage Current (IX)
II
1, 2, 3
-55oC TA +125oC
-20
+20
A
I/O Leakage Current
IO
1, 2, 3
-55oC TA +125oC
-10
+10
A
Output HIGH Voltage (All except OX)
VOH
1, 2, 3
-55oC TA +125oC
VCC -0.4
-
V
Output LOW Voltage (All except OX)
VOL
1, 2, 3
-55oC TA +125oC
-
0.4
V
137
HD-6409/883
TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Guaranteed and 100% Tested LIMITS PARAMETER Standby Power Supply Current SYMBOL ICCSB CONDITIONS VIN = VCC or GND, VCC = 5.5V, Outputs Open f = 16.0MHz, VIN = VCC or GND VCC = 5.5V, CL = 50pF (Note 2) GROUP A SUBGROUPS 1, 2, 3 TEMPERATURE -55oC TA +125oC MIN MAX 100 UNITS A
Operating Power Supply Current
ICCOP
1, 2, 3
-55oC TA +125oC
-
18.0
mA
Functional Test NOTES:
FT
7, 8
-55oC TA +125oC
-
-
-
1. Interchanging of force and sense conditions is permitted. 2. Tested as follows: f = 16MHz, VIH = 70% VCC, VIL = 20% VCC, VOH VCC/2, and VOL VCC/2, VCC = 4.5V and 5.5V. TABLE 2. HD-6409/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS PARAMETER Clock Frequency Clock Period Bipolar Pulse Width One-Zero Overlap Clock High Time Clock Low Time Serial Data Setup Time Serial Data Hold Time DCLK to SDO, NVM ECLK to BZO NOTES: 1. AC Testing as follows: f = 4.0MHz, VIH = 70% VCC, VIL = 20% VCC, Speed Select = 16X; VOH VCC/2, VOL VCC/2; VCC = 4.5V and 5.5V; Input rise and fall times driven at 1 ns/V, Output load = 50pF. TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS LIMITS PARAMETER Input Capacitance I/O Capacitance SYMBOL CIN CI/O CONDITIONS VCC = Open, f =1MHz All Measurements are referenced to device GND From 1.0 to 3.5V CL = 50pF NOTES 1, 2 1, 2 TEMPERATURE TA = +25oC TA = +25oC -55oC TA +125oC MIN MAX 10 12 UNITS pF pF SYMBOL fC tC t1 t3 tCH tCL tCE1 tCE2 tCD2 tR2 f =16.0MHz f =16.0MHz (NOTE 1) CONDITIONS GROUP A SUBGROUPS 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 TEMPERATURE -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC MIN 1/fC tC +10 20 20 120 0 MAX 16 tC - 10 40 40 UNITS MHz sec ns ns ns ns ns ns ns ns
Output Rise Time (All except CO)
tr
1, 2
-
50
ns
138
HD-6409/883
TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) LIMITS PARAMETER Output Fall Time (All except CO) SYMBOL tf CONDITIONS From 3.5 to 1.0V CL = 50pF From 1.0 to 3.5V CL = 20pF From 3.5 to 1.0V CL = 20pF NOTES 1, 2 TEMPERATURE -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC -55oC TA +125oC MIN MAX 50 UNITS ns
CO Rise Time
tr
1, 2
-
11
ns
CO Fall Time
tf
1, 2
-
11
ns
ECLK to BZO, BOO CTS Low to BZO BOO Enabled CTS Low to ECLK Enabled CTS High to ECLK Disabled CTS High to BZO BOO Disabled UDI to SDO, NVM RST Low to DCLK, SDO, NVM Low RST High to DCLK, Enabled UDI to BZO, BOO UDI to SDO, NVM NOTES:
tCE3 tCE4 tCE5 tCE6 tCE7 tCD1 tCD3 tCD4 tR1 tR3
1, 3 1, 3 1, 3 1, 3 1, 3 1, 3 1.3 1, 3 1, 3 1, 3
0.5 0.5 10.5 1.5 2.5 0.5 0.5 0.5 2.5
1.0 1.5 11.5 1.0 2.5 3.0 1.5 1.5 1.0 3.0
DBP DBP DBP DBP DBP DBP DBP DBP DBP DBP
1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. 2. Guaranteed via characterization at initial device design and after major process and/or design changes. 3. DBP-Data Bit Period, Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X, one DBP = 32 Clock Cycles. TABLE 4. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test Interim Test PDA Final Test Group A Groups C & D METHOD 100%/5004 100%/5004 100% 100% Samples/5005 SUBGROUPS 1, 7, 9 1 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 7, 9
139
HD-6409/883 Burn-In Circuits
HD-6409/883 CERDIP HD-6409/883 CLCC
GND VCC VCC 20
F4
R1
R1
R1 VCC GND F4 GND A A A A VCC R1 1 R1 2 R1 R1 4 5 6 7 8 9 10 17 16 15 14 13 12 11 R1 R1 3 20 19 18 R1 VCC 3 A A GND A GND GND R1 A F0 A R1 R1 A A 7 8 9 10 11 12 13 15 R1 14 GND GND A A R1 4 5 6 18 R1 17 16 R1 GND GND A A 2 1 19
R1
F0 R1 R1
A
VCC
VCC R1 A R1 A
VCC
NOTES: 1. VCC = 5.5V 0.5V 2. VIH = 4.5V 10% 3. VIL 4. R1 5. F0 6. F4 = -0.2V to 0.4V = 47k 5% = 100kHz 10% = F0/16
140
A
A
HD-6409/883 Die Characteristics
DIE DIMENSIONS: 88 x 78 x 19 1mils METALLIZATION: Type: Silicon - Aluminum Thickness: Metal 1: 8kA 1kA Metal 2: 16kA 1kA GLASSIVATION: Type: Si3N4 * SiOX Thickness: 10kA 2kA WORST CASE CURRENT DENSITY: 0.8 x 105 A/cm2
Metallization Mask Layout
HD-6409/883
UDI
BOI
BZI
VCC
BOO
SD/CDS
BZO
SDO
SS
SRST
ECLK
NVM
CTS
DCLK
MS
RST
GND
CO
IX
OX
141

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